Global IGBT and Super Junction MOSFET Market Is Estimated To Witness High Growth Owing To Increasing Demand for Energy-Efficient Devices and Growing Industrial Automation
IGBT and Super Junction MOSFET Market |
The global IGBT and Super Junction MOSFET market is estimated to be valued at US$ 12,782.8 million in 2021 and is expected to exhibit a CAGR of 12.5% over the forecast period 2021-2028, as highlighted in a new report published by Coherent Market Insights.
A) Market Overview
IGBT (Insulated-Gate Bipolar Transistor) and Super Junction MOSFET (Metal Oxide
Semiconductor Field-Effect Transistor) are key components in various industries
for power electronics applications. These devices are widely used in energy
conversion systems, electric vehicles, consumer electronics, industrial
automation, renewable energy systems, and more. The demand for energy-efficient
devices is increasing due to rising awareness about environmental
sustainability and the need for energy conservation. IGBTs and Super Junction
MOSFETs offer higher efficiency, lower power losses, and higher reliability
compared to conventional power transistors, making them ideal for various applications.
B) Market Dynamics
1. Driver: Increasing demand for energy-efficient devices
The growing need for energy conservation and reducing carbon footprints is
driving the demand for energy-efficient devices across industries. IGBTs and
Super Junction MOSFETs offer higher efficiency and lower power losses,
resulting in reduced energy consumption. These devices are widely used in
electric vehicles, renewable energy systems, and industrial automation, where
energy efficiency is critical. For example, IGBTs are used in electric vehicles
to control motor speed and ensure efficient power conversion. Additionally,
governments worldwide are implementing stringent regulations and providing
incentives to promote energy-efficient technologies, further boosting the market
growth.
2. Driver: Growing industrial automation
With the increasing adoption of Industry 4.0 and automation technologies, the
demand for power electronics components such as IGBTs and Super Junction
MOSFETs is witnessing significant growth. These devices play a crucial role in
controlling and powering various industrial automation systems, including
robots, motor drives, motor control units, and more. The integration of power
electronics in automation systems enhances productivity, reduces operational
costs, and improves efficiency. Additionally, the rising trend of smart
manufacturing and the use of advanced technologies, such as the Industrial
Internet of Things (IIoT), is further fueling the demand for IGBTs and Super
Junction MOSFETs in industrial automation.
C) SWOT Analysis
Strengths:
1. High efficiency power conversion capability
2. Wide range of applications across industries
Weaknesses:
1. High cost compared to conventional power transistors
2. Complexity in design and manufacturing process
Opportunities:
1. Growing demand for renewable energy systems
2. Increasing adoption of electric vehicles
Threats:
1. Intense competition from other power semiconductor technologies
2. Fluctuating prices of raw materials
D) Key Takeaways
The Global
IGBT and Super Junction MOSFET Market is expected to witness high
growth, exhibiting a CAGR of 12.5% over the forecast period, due to increasing
demand for energy-efficient devices and growing industrial automation. The
market size is projected to reach US$ XX.XX million by 2028.
In terms of regional analysis, Asia Pacific is expected to be the
fastest-growing and dominating region in the market. The region's growth can be
attributed to the presence of major manufacturing hubs in China, Japan, and
South Korea, where industries such as automotive, consumer electronics, and
industrial automation drive the demand for IGBTs and Super Junction MOSFETs.
Key players operating in the global IGBT and Super Junction MOSFET market
include Infineon Technologies AG, Vishay Intertechnology, Inc., Mitsubishi
Electric Corporation, STMicroelectronics N.V., Fuji Electric Co. Ltd., Toshiba
Corporation, Hitachi Power Semiconductor Device Ltd., Fairchild Semiconductor
International, Inc., Semikron Elektronik GmbH & Co. KG, and ABB Ltd.
Overall, the global IGBT and Super Junction MOSFET market is poised for
significant growth, driven by the increasing demand for energy-efficient
devices and the growing adoption of industrial automation. Manufacturers need
to focus on product innovation, cost optimization, and strategic partnerships
to gain a competitive edge in the market.
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